您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第6354页 > SKB02N120

型号 功能描述 生产厂家&企业 LOGO 操作
SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machi

Infineon

英飞凌

SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for frequency inverters for

Infineon

英飞凌

SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

Infineon

英飞凌

SKB02N120_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machi

Infineon

英飞凌

SKB02N120_13

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for frequency inverters for

Infineon

英飞凌

02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

Infineon

英飞凌

IXTP02N120P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 0.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo

ISC

无锡固电

IXTY02N120P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IXTP02N120P

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes Page：4 Pages

IXYS

艾赛斯

IXTY02N120P

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes Page：4 Pages

IXYS

艾赛斯

SKB02N120产品属性

  • 类型

    描述

  • 型号

    SKB02N120

  • 功能描述

    IGBT 晶体管 FAST IGBT NPT TECH 1200V 2A

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

SKB02N120供应商更多...

更新时间：2025-8-17 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市正纳电子有限公司
SKB02N120
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市中联芯电子有限公司
SKB02N120
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
询价
深圳市明嘉莱科技有限公司
SKB02N120
INFINEON/英飞凌
25+
NA
860000
明嘉莱只做原装正品现货
询价
深圳航星空电子技术有限公司
SKB02N120
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装，可来电咨询
询价
深圳市一线半导体有限公司
SKB02N120
INFINEON
24+
P-TO263-3-2
8866
询价
海芯未来半导体电子（深圳）有限公司
SKB02N120
Infineon/英飞凌
25+
PG-TO263-3
10000
全新原装现货
询价
深圳市河锋鑫科技有限公司
SKB02N120
英飞翎
17+
D2PAK(TO-263)
31518
原装正品 可含税交易
询价
深圳市威尔健半导体有限公司
SKB02N120
INFINEON/英飞凌
23+
TO-263
50000
全新原装正品现货,支持订货
询价
深圳市富利微电子科技有限公司
SKB02N120
Infineon/英飞凌
24+
PG-TO263-3
25000
原装正品,假一赔十!
询价
深圳市赛美科科技有限公司
SKB02N120
INFINEON
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
询价

SKB02N120芯片相关品牌

SKB02N120规格书下载地址

SKB02N120参数引脚图相关

SKB02N120数据表相关新闻

  • SK1816MG-SIP3B-TZ1G

    SK1816MG-SIP3B-TZ1G

    2023-2-1

  • SKBPC3508 全新原装现货

    SKBPC3508，全新原装现货0755-82732291当天发货或门市自取.

    2020-11-27

  • SKBC3510

    SKBC3510当天发货0755-82732291全新原装现货或门市自取.

    2020-9-9

  • SJ-S-112DM

    SJ-S-112DM，当天发货0755-82732291全新原装现货或门市自取.

    2020-8-26

  • SKB30/08A1，SKB30/12A1，SKB30/16A1，SKB33/02，SKB33/04，

    SKB30/08A1，SKB30/12A1，SKB30/16A1，SKB33/02，SKB33/04，

    2020-2-22

  • SK70DT16SK70DT12

    专业销售代理国内外知名品牌电力电子半导体器件；主要代理及经销德国Infineon英飞凌、EUPEC优派克、SIEMENS西门子、西门康Semikron、瑞士ABB、Mitsubishi三菱、Fuji富士、TOSHIBA东芝、HITACHI日立、TYCO泰科、变频器主控板、操作面板及延长电缆等配件以及富士制动单元

    2019-10-18

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示