SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER

Surface Mount Schottky Rectifiers- Common Cathode

Nominal Current 20 A Repetitive peak reverse voltage 20 100 V Plastic case TO-263 Weight approx. 1.6 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

Schottky Barrier Rectifier

FEATURES · Low Forward Voltage Drop · High Power Dissipation · Compliant to RoHS APPLICATIONS · Switching Power Supplies · Converters · Free Wheeling Diodes

Surface Mount Schottky Rectifier Diodes - Common Cathode

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SMD Schottky Barrier Rectifier Diodes

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Schottky Diodes

Schottky Diodes

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara