位置：首页 > IC中文资料 > SJMN11N65G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
renesas |
2023+ |
SOT-23 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
CET |
23+ |
TO252 |
15000 |
全新原装现货,价格优势 |
|||
CET |
21+ |
TO-252 |
360 |
原装现货假一赔十 |
|||
CET/華瑞 |
21+ROHS |
TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
1932+ |
TO-252 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
22+23+ |
TO252 |
68158 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
CET |
2020+ |
TO-252 |
10000 |
公司代理品牌,原装现货超低价清仓! |
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SJMN11N65G规格书下载地址
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DdatasheetPDF页码索引
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