EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

HEXFETPOWERMOSFET

DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

22A,600VN-CHANNELPOWERMOSFET

文件：211.84 Kbytes Page：6 Pages

N-ChannelMOSFET

文件：986.23 Kbytes Page：2 Pages

N-ChannelMOSFET600V,22A,0.165W

文件：532.87 Kbytes Page：8 Pages