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SIHP22N60价格
参考价格：￥13.0249
型号：SIHP22N60E-E3 品牌：Vishay 备注：这里有SIHP22N60多少钱，2025年最近7天走势，今日出价，今日竞价，SIHP22N60批发/采购报价，SIHP22N60行情走势销售排行榜，SIHP22N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se | VishayVishay Siliconix 威世威世科技公司 |   | ||
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se | VishayVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se | VishayVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se | VishayVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世威世科技公司 | | ||
EF Series Power MOSFET With Fast Body Diode FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世威世科技公司 | | ||
EL Series Power MOSFET FEATURES • Reduced figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Se | VishayVishay Siliconix 威世威世科技公司 | | ||
Low input capacitance 文件：134.87 Kbytes Page：7 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：329.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
E Series Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：329.04 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
E Series Power MOSFET 文件：219.44 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
EF Series Power MOSFET With Fast Body Diode | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：338.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
iscN-Channel MOSFET Transistor 文件：328.84 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
S Series Power MOSFET 文件：216.68 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
22A, 600V N-CHANNEL POWER MOSFET 文件：211.84 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel MOSFET 文件：986.23 Kbytes Page：2 Pages | ESTEK 伊泰克电子 | | ||
N-Channel MOSFET 600V, 22A, 0.165W 文件：532.87 Kbytes Page：8 Pages | Fairchild 仙童半导体 | |
SIHP22N60产品属性
- 类型
描述
- 型号
SIHP22N60
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
E Series Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
70 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY |
25+23+ |
TO-220 |
37748 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY/威世 |
24+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Vishay(威世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY/威世 |
18+ |
TO-220 |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
SIHP22N60芯片相关品牌
SIHP22N60规格书下载地址
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DdatasheetPDF页码索引
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