E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced noise • Material categorization: for definit

Reduced switching and conduction losses

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E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced noise • Material categorization: for definit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

文件：313.18 Kbytes Page：2 Pages

iscN-Channel MOSFET Transistor

文件：319.57 Kbytes Page：2 Pages

E Series Power MOSFET with Fast Body Diode

文件：167.31 Kbytes Page：7 Pages