High Peak Current Capability

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr • Improved Gate Charge • High Power Dissipations Capability • Compliant to RoHS Directive 2002/95/EC

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · Power switch and solenoid drive

Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr • Improved Gate Charge • High Power Dissipations Capability • Compliant to RoHS Directive 2002/95/EC

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

Power MOSFET

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isc N-Channel MOSFET Transistor

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Power MOSFET

Power MOSFET

文件：198 Kbytes Page：8 Pages

Power MOSFET

文件：219.58 Kbytes Page：10 Pages

Power MOSFET

文件：219.58 Kbytes Page：10 Pages

E Series Power MOSFET

E Series Power MOSFET

文件：176.86 Kbytes Page：9 Pages

iscN-Channel MOSFET Transistor

文件：444.77 Kbytes Page：2 Pages

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

Low leakage current

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20A, 500V N-CHANNEL POWER MOSFET

文件：142.14 Kbytes Page：4 Pages

20A 500V N-channel Enhancement Mode Power MOSFET

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20A 500V N-channel enhanced field effect transistor

文件：888.77 Kbytes Page：6 Pages