位置：首页 > IC中文资料第12468页 > SIHFU9210
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 |   | |
SIHFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFU9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFU9210 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | |
SiHFU9210 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：891.33 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Drive Fasteners 文件：93.97 Kbytes Page：1 Pages | Heyco | | ||
ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES 文件：173.83 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SIHFU9210产品属性
- 类型
描述
- 型号
SIHFU9210
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原装特价SiHFU9210即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
23+ |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY(威世) |
2021+ |
TO-251-3 |
499 |
||||
VIS |
23+ |
TO-251 |
10000 |
原装正品,假一罚十 |
|||
VISHAY(威世) |
24+ |
TO251 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY(威世) |
2447 |
TO-251-3 |
315000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA |
|||
Vishay |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
SIHFU9210规格书下载地址
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DdatasheetPDF页码索引
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