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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技 |  |   |
SIHFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. |  | |
SIHFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | |
SIHFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | |
SIHFU9210 | PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | |
SIHFU9210 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：891.33 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 |  | | |
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 | | | |
MiniatureForceSensorformoldcavitypressurewithdiameterø3.5mm •Minimumsizeforinstallationinamoldinsert •Idealformulti-cavityapplications •Indirectmeasurementviaameasuringpin | KISTLERKISTLER INSTRUMENT CORPORATION 奇石乐奇石乐集团 | | | |
DriveFasteners 文件：93.97 Kbytes Page：1 Pages | Heyco Heyco |  | | |
ACCEPTS16,18or20PINWIDES.O.I.C.BUILDPLUG-INTESTCIRCUITSANDMODULES 文件：173.83 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
SIHFU9210产品属性
- 类型
描述
- 型号
SIHFU9210
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
21+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA |
|||
VB |
2019 |
TO220AB |
55000 |
绝对原装正品假一罚十! |
|||
isc |
2024 |
IPAK/TO-251 |
1000 |
国产品牌isc,可替代原装 |
|||
VISHAY(威世) |
2021+ |
TO-251-3 |
499 |
||||
VISHAY(威世) |
23+ |
TO251 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
apec |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VISHAY(威世) |
1921+ |
TO-251-3 |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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SIHFU9210规格书下载地址
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