位置：首页 > IC中文资料第11720页 > SIHFR9310T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9310T | PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 |  |   |
SIHFR9310T | PowerMOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. |  | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：3.34757 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：267.35 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：267.35 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：267.35 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
MACHINESCREWPANPHILLIPS10-32 文件：130.87 Kbytes Page：1 Pages | KEYSTONEKeystone Electronics Corp. Keystone公司Keystone Electronics有限公司 |  | | |
Infra-RedWavelength 文件：112.83 Kbytes Page：6 Pages | AVAGOAvago 安华高安华高科技 |  | | |
SAWRx2in1filter881.5/1960.0MHz 文件：139.44 Kbytes Page：10 Pages | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 |  | | |
1.5MHz,1ASynchronousBuckConverter 文件：456.87 Kbytes Page：11 Pages | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 |  | | |
VoltageControlledOscillator 文件：50.42 Kbytes Page：1 Pages | APITECH API Technologies Corp |  | |
SIHFR9310T产品属性
- 类型
描述
- 型号
SIHFR9310T
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
TO252 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
utc |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
isc |
2024 |
DPAK/TO-252 |
1000 |
国产品牌isc,可替代原装 |
|||
VISHAY |
2023+ |
TO252 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
Vishay |
23+ |
TO-252 |
33500 |
全新原装真实库存含13点增值税票! |
|||
Vishay Siliconix |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY/威世 |
21+ |
TO252 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY/威世 |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
VISHAY/威世 |
2325+ |
TO-252 |
33000 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
SIHFR9310T芯片相关品牌
SIHFR9310T规格书下载地址
SIHFR9310T参数引脚图相关
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SIHFR9310T数据表相关新闻
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2019-12-7
DdatasheetPDF页码索引
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