位置：首页 > IC中文资料第7541页 > SIHFR9210-E3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFR9210-E3 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK | VishayVishay Siliconix 威世 |   | |
SIHFR9210-E3 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFR9210-E3 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFR9210-E3 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
SIHFR9210-E3 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP | KERSEMI | | |
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP | VishayVishay Siliconix 威世 | |
SIHFR9210-E3产品属性
- 类型
描述
- 型号
SIHFR9210-E3
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
VISHAY/威世 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
VISHAY/威世 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
20+ |
TO-252 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY |
23+ |
SOT252 |
8560 |
受权代理!全新原装现货特价热卖! |
SIHFR9210-E3规格书下载地址
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DdatasheetPDF页码索引
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