30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –4.5 A, –30 V RDS(ON) = 40 mΩ @ VGS

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –4.5 A, –30 V RDS(ON) = 40 mΩ @ VGS

P-Channel 30-V (D-S) MOSFET

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30-V (D-S) Single

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET

文件：94.89 Kbytes Page：5 Pages

P-Channel 30-V (D-S) MOSFET

文件：203.68 Kbytes Page：10 Pages

P-Channel 30-V (D-S) MOSFET

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P-Channel 20-V (G-S) MOSFET

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Low-Power, Single/Dual-Level Battery Monitors with Hysteresis

General Description The MAX6427–MAX6438 are single/dual-level battery monitors with internal hysteresis. These devices are offered with single (MAX6427/MAX6428/MAX6429, MAX6433/MAX6434/MAX6435) or dual (MAX6430/MAX6431/MAX6432, MAX6436/MAX6437/MAX6438) low-battery output indicators, which can b

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For high-frequency amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For high-frequency amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.