N- and P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) Si5513CDC-T1-GE3 (Lead (Pb)-free a

N- and P-Channel 20 V (D-S) MOSFET

文件：274.29 Kbytes Page：16 Pages

N- and P-Channel 20 V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET

文件：144.83 Kbytes Page：12 Pages

N- and P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) Si5513CDC-T1-GE3 (Lead (Pb)-free a

N- and P-Channel 20 V (D-S) MOSFET

文件：274.29 Kbytes Page：16 Pages

N- and P-Channel 20 V (D-S) MOSFET

文件：274.29 Kbytes Page：16 Pages

N- and P-Channel 20-V (D-S) MOSFET

文件：144.83 Kbytes Page：12 Pages

N- and P-Channel 20 V (D-S) MOSFET

文件：274.29 Kbytes Page：16 Pages

CMOS-CCD 1H Delay Line for NTSC

Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t

CMOS-CCD 1H Delay Line for NTSC

Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t

TR909 DLC/FLC SLIC with Low Power Standby

The HC5513 is a subscriber line interface circuit which is interchangeable with Ericsson’s PBL3764 for distributed central office applications. Enhancements include immunity to circuit latch-up during hot plug and absence of false signaling in the presence of longitudinal currents. Features •

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward c

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free