N- and P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits

N- and P-Channel 20-V (D-S) MOSFET

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N- and P-Channel 20-V (D-S) MOSFET

文件：134.49 Kbytes Page：12 Pages

N- and P-Channel 20 V (D-S) MOSFET

N- and P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits

N- and P-Channel 20-V (D-S) MOSFET

文件：134.49 Kbytes Page：12 Pages

CMOS-CCD 1H/2H Delay Line for NTSC

Description The CXL5509M/P is a CMOS-CCD delay line developed for video signal processing. Usage in conjunction with an external low-pass filter provide 1H and 2H delay signals simultaneously (For NTSC signals). Features • Single power supply (5V) • Low power consumption 130mW (Typ.) • Built-

CMOS-CCD 1H/2H Delay Line for NTSC

Description The CXL5509M/P is a CMOS-CCD delay line developed for video signal processing. Usage in conjunction with an external low-pass filter provide 1H and 2H delay signals simultaneously (For NTSC signals). Features • Single power supply (5V) • Low power consumption 130mW (Typ.) • Built-

SLIC Subscriber Line Interface Circuit

The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation (DI) process and is designed for use as a high voltage interface between the traditional telephone subscriber pair (Tip and Rin

Silicon Controlled Rectifier (SCR) 16 Amp

Description: The NTE5500 thru NTE5509 series of industrial–type silicon controlled rectifiers (SCR) are available in a TO48 style package with a current handling capability to 25 Amps at junction temperatures to +125°C.

Ultra-Low Noise Preamplifier

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