FCC EMBEDDED DIRECT ACCESS ARRANGEMENT

Description The Si3068 is an integrated direct access arrangement (DAA) for use with an integrated DAA system-side module. It includes a V.92 quality codec, dc termination, ac termination, and an integrated hybrid, eliminating the need for an analog front end (AFE), isolation transformer, relays,

FCC EMBEDDED DIRECT ACCESS ARRANGEMENT

FCC EMBEDDED DIRECT ACCESS ARRANGEMENT

Description The Si3068 is an integrated direct access arrangement (DAA) for use with an integrated DAA system-side module. It includes a V.92 quality codec, dc termination, ac termination, and an integrated hybrid, eliminating the need for an analog front end (AFE), isolation transformer, relays,

封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 功能：直接存取装置（DAA） 包装：托盘 描述：IC TELECOM INTERFACE 8SOIC 集成电路（IC） 电信

封装/外壳：10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 功能：直接存取装置（DAA） 包装：管件 描述：IC TELECOM INTERFACE 10MSOP 集成电路（IC） 电信

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

0.4??Single Digit Numeric Display Seven Segment, RHDP

Description: The NTE3068 through NTE3071 are 0.4 inch (10.16mm) height single digit displays. The NTE3068 and NTE3069 devices utilize LED chips which are made from GaP on a transparent GaP substrate. The NTE3070 and NTE3071 devices utilize chips which are made from GaAsP on a transparent GaP subs