Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable beha

NPT IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=3.6V@IC=25A · Short Circuit Capability · Low Power Loss APPLICATIONS · Power Inverters · SMPS · Battery Chargers

Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation

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分立式IGBT

Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation

文件：338.47 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 46A 313W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) High speed IGBT

Low VCE(sat) High speed IGBT Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

Extremely enhanced avalanche capability

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

IGBT

General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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1200 V, 25 A NPT Trench IGBT

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