位置：首页 > IC中文资料第4459页 > SGW23N60UFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGW23N60UFD | Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
N-CHANNELSILICONPOWERMOSFET 文件：585.96 Kbytes Page：5 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
N-CHANNELSILICONPOWERMOSFET 文件：585.01 Kbytes Page：5 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELSILICONPOWERMOSFET 文件：592.4 Kbytes Page：5 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
iscN-ChannelMOSFETTransistor 文件：324.14 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-CHANNELSILICONPOWERMOSFET 文件：576.1 Kbytes Page：5 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | |
SGW23N60UFD产品属性
- 类型
描述
- 型号
SGW23N60UFD
- 功能描述
IGBT 晶体管 600V/ 12A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
50477 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
FAI |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263(D2PAK) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
FAIRCHILD/仙童 |
TO-263 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
FAIRCHILD/仙童 |
22+ |
TO-263(D2PAK) |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHILD |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
FAIRCHILD/仙童 |
2022 |
TO-263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHILD |
21+ |
TO-263 |
30490 |
原装现货库存 |
SGW23N60UFD芯片相关品牌
SGW23N60UFD规格书下载地址
SGW23N60UFD参数引脚图相关
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DdatasheetPDF页码索引
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