位置：首页 > IC中文资料第4174页 > SGW10N60RUFDTM
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
10Amps,600/650VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  |   | |
N-Channel650V(D-S)PowerMOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
10A600VN-channelEnhancementModePowerMOSFET 文件：976.2 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | | |
10Amps,600/650VoltsN-CHANNELPOWERMOSFET 文件：330.13 Kbytes Page：8 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
SGW10N60RUFDTM产品属性
- 类型
描述
- 型号
SGW10N60RUFDTM
- 功能描述
IGBT 晶体管 600V/10A/W/FRD
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
23+ |
TO-220F |
9526 |
||||
FAIRCHILD |
22+ |
TO-220F |
8000 |
原装正品支持实单 |
|||
UBIQ |
23+ |
TO220 |
15000 |
全新原装现货,价格优势 |
|||
UTC(友顺) |
24+ |
TO-220F-3 |
5000 |
诚信服务,绝对原装原盘。 |
|||
AOS/万代 |
2023+ |
TO-220 |
17000 |
原厂全新正品旗舰店优势现货 |
|||
AO/FCS/IPS |
TO-220220F |
265209 |
假一罚十原包原标签常备现货! |
||||
FAIRCHILD |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
|||
UTC |
23/22+ |
TO220 |
211 |
20年老代理.原厂技术支持 |
|||
FSC |
22+ |
TO-220F |
16200 |
郑重承诺只做原装进口货 |
|||
TF拓峰 |
23+ |
T0-220 |
22820 |
原装正品，支持实单 |
SGW10N60RUFDTM芯片相关品牌
SGW10N60RUFDTM规格书下载地址
SGW10N60RUFDTM参数引脚图相关
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DdatasheetPDF页码索引
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