isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.17Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include robotics, laser diode drives, UPS, SMPS a

N-CHANNEL ELHANCEMENT MODE POWER MOS TRANSISTOR

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THE RECEIVING RF CIRCUITS OF TRANSCEIVER)

SPECIFICATIONS FOR SAW FILTER Band pass filters for the receiving RF circuits of transceiver

Round Type

Round Type φ 3.0 mm Series

Silicon NPN Transistor RF Power Output

Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: • High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz • Emitter ballasted construction and gold metallization for h

Round Type

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