isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB • Built–In Matching Network for Broadband

3-TERMINAL POSITIVE ADJUSTABLE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

3-TERMINAL POSITIVE ADJUSTABLE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

ADJUSTABLE 3-TERMINAL POSITIVE VOLTAGE REGULATOR

文件：260.25 Kbytes Page：8 Pages

ADJUSTABLE 3-TERMINAL POSITIVE VOLTAGE REGULATOR

文件：260.25 Kbytes Page：8 Pages