isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon PNP epitaxial planer transistor

Transistor array to drive the small motor ■ Features ● Small and lightweight ● Low power consumption (low VCE(sat) transistor used) ● Low-voltage drive ● With 6 elements incorporated. (SO–14) ■ Applications ● Video cameras ● Cameras ● Portable CD players ● Small motor drive circuits in g

Three quadrant triacs high commutation

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3.0 mm X 7.0 mm Series

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Silicon NPN Transistor High Speed Switch, Core Driver

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