位置:首页 > IC中文资料 > SGSI808D

SGSI808D晶体管资料

  • SGSI808D别名:SGSI808D三极管、SGSI808D晶体管、SGSI808D晶体三极管

  • SGSI808D生产厂家

  • SGSI808D制作材料:Si-N+Darl+Di

  • SGSI808D性质:开关管 (S)_功率放大 (L)

  • SGSI808D封装形式:直插封装

  • SGSI808D极限工作电压:1400V

  • SGSI808D最大电流允许值:10A

  • SGSI808D最大工作频率:<1MHZ或未知

  • SGSI808D引脚数:3

  • SGSI808D最大耗散功率:50W

  • SGSI808D放大倍数:β>25

  • SGSI808D图片代号:B-70

  • SGSI808Dvtest:1400

  • SGSI808Dhtest:999900

  • SGSI808Datest:10

  • SGSI808Dwtest:50

  • SGSI808D代换 SGSI808D用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

更新时间:2026-5-15 14:07:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT-363
23400
原装现货假一赔十
NEC
2223+
SOT-523
26800
只做原装正品假一赔十为客户做到零风险
NEC
24+
SOT-523
9200
新进库存/原装
NEC
08+PB
SOT-363
23400
原装正品 可含税交易
NEC
2025+
SOT-363
7695
全新原厂原装产品、公司现货销售
NEC
25+
SOT23-5
15300
公司常备大量原装现货,可开13%增票!
NEC
2450+
SOT-363
8850
只做原装正品假一赔十为客户做到零风险!!
NEC/日电电子
25+
90000
全新原装现货
NEC
25+
SOP5脚管
2987
只售原装自家现货!诚信经营!欢迎来电!
NEC
25+
SOT-363
40795
NEC全新特价UPA808TC-T1即刻询购立享优惠#长期有货

SGSI808D数据表相关新闻