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SGSD200晶体管资料

  • SGSD200别名:SGSD200三极管、SGSD200晶体管、SGSD200晶体三极管

  • SGSD200生产厂家

  • SGSD200制作材料:Si-P+Darl+Di

  • SGSD200性质:功率放大 (L)_开关管 (S)

  • SGSD200封装形式:直插封装

  • SGSD200极限工作电压:80V

  • SGSD200最大电流允许值:25A

  • SGSD200最大工作频率:<1MHZ或未知

  • SGSD200引脚数:3

  • SGSD200最大耗散功率:130W

  • SGSD200放大倍数:β=600-15000

  • SGSD200图片代号:B-70

  • SGSD200vtest:80

  • SGSD200htest:999900

  • SGSD200atest:25

  • SGSD200wtest:130

  • SGSD200代换 SGSD200用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
SGSD200

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: ■ AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL PURPOSE SWITCHING APPLICATIONS DESCRIPTION The SGSD100 is Sili

STMICROELECTRONICS

意法半导体

SGSD200

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The SGSD100 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-247 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. Features ■ Complementary NPN -

STMICROELECTRONICS

意法半导体

SGSD200

封装/外壳:TO-247-3 包装:散装 描述:TRANS PNP DARL 80V 25A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

SGSD200

TRANS PNP DARL 80V 25A TO-247

STMICROELECTRONICS

意法半导体

SGSD200

Complementary power Darlington transistors

文件:687 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

SGSD200产品属性

  • 类型

    描述

  • 型号

    SGSD200

  • 功能描述

    达林顿晶体管 PNP Power Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2026-5-17 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
20948
样件支持,可原厂排单订货!
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
25+23+
TO3P
32992
绝对原装正品全新进口深圳现货
ST/意法
25+
TO3P
880000
明嘉莱只做原装正品现货
ST
23+
TO-3P
16900
正规渠道,只有原装!
ST
24+
TO-247-3
581
ST
2447
TO3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
22+
TO3P
20000
只做原装 品质保障
ST
24+
TO-3P
16800
绝对原装进口现货 假一赔十 价格优势!?
ST
24+
TO-3P
1250
原装现货热卖

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