Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.. Features • High speed

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 6A 22W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

文件：486.21 Kbytes Page：10 Pages

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes Page：9 Pages