位置：首页 > IC中文资料第12888页 > SGS6N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGS6N60 | Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Ultra-FastIGBT GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature.. Features •Highspeed | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 6A 22W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 6A 22W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
AvalancheEnergySpecified DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=1.2Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
6.2Amps,600/650VoltsN-CHANNELMOSFET DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N-CHANNELPOWERMOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | | |
N-ChannelPowerMOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | | |
N-Channel600V(D-S)PowerMOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
SGS6N60产品属性
- 类型
描述
- 型号
SGS6N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
Ultra-Fast IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
仙童 |
24+ |
TO |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
Fairchild/ON |
23+ |
TO220F |
8000 |
只做原装现货 |
|||
FAIRC |
2020+ |
TO-220F |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FAIRCHILDSEMICONDUCTOR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
FAIRCHILD/仙童 |
TO-TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
FAIRCHILD/仙童 |
23+ |
TO |
10000 |
公司只做原装正品 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHILD/仙童 |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
SGS6N60芯片相关品牌
SGS6N60规格书下载地址
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SGS6N60数据表相关新闻
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SH367106
2019-8-8SGMSGM2036-18YUDH4G/TRUTDFN1x1-4L18+DFN4主打产品原装现货
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2018-12-27
DdatasheetPDF页码索引
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