Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

Ultra-Fast IGBT

High speed switching

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

High speed switching

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

600V，PT IGBT

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 23A 73W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-CHANNEL SILICON POWER MOSFET

文件：585.96 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：585.01 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：592.4 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：324.14 Kbytes Page：2 Pages

N-CHANNEL SILICON POWER MOSFET

文件：576.1 Kbytes Page：5 Pages