Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 13A 45W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switch

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel 650V (D-S) Power MOSFET

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isc N-Channel MOSFET Transistor

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