General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica

High input impedance

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica

High input impedance

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 400V 45W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 400V 45W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

400V, 23A N-CHANNEL POWER MOSFET

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20A竊?00V N-CHANNEL MOSFET

文件：445.83 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

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400V,20A N-Channel MOSFET

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