位置：首页 > IC中文资料第2358页 > SGP13N60UFTU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGP13N60UFTU | Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
SGP13N60UFTU | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 13A 60W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies.DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications.TheNell13N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof13A,fastswitch | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | | |
N-ChannelMOSFET600V,13A,0.258廓 Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelMOSFET600V,13A,0.258廓 Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.06712 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：301.97 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SGP13N60UFTU产品属性
- 类型
描述
- 型号
SGP13N60UFTU
- 功能描述
IGBT 晶体管 Dis High Perf IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC/上优 |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SEC |
21+ |
TO-220 |
12800 |
只有原装 ,可支持实单 |
|||
FSC |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
23+ |
N/A |
78000 |
一级代理放心采购 |
||||
INFINEON |
17+ |
TO-220 |
9888 |
全新原装现货 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
4985 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
SEC |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
Fairchild/ON |
23+ |
TO2203 |
8000 |
只做原装现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
SGP13N60UFTU芯片相关品牌
SGP13N60UFTU规格书下载地址
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DdatasheetPDF页码索引
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