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SGB07N120价格
参考价格：￥11.0101
型号：SGB07N120ATMA1 品牌：INF 备注：这里有SGB07N120多少钱，2025年最近7天走势，今日出价，今日竞价，SGB07N120批发/采购报价，SGB07N120行情走势销售排行榜，SGB07N120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGB07N120 | Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swi | Infineon 英飞凌 |   | |
SGB07N120 | Fast IGBT in NPT-technology lower Eoff compared to previous generation 文件：443.8 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
Fast IGBT in NPT-technology lower Eoff compared to previous generation 文件：443.8 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1200V 16.5A 125W TO263-3-2 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swi | Infineon 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution | Infineon 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swi | Infineon 英飞凌 | |
SGB07N120产品属性
- 类型
描述
- 型号
SGB07N120
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 1200V 8A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
||||
INFINEON/英飞凌 |
25+ |
TO-263 |
2000 |
全新原装正品支持含税 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INENOI |
25+ |
TO-263 |
17044 |
||||
INFINEON/英飞凌 |
24+ |
TO-263 |
48255 |
只做全新原装进口现货 |
|||
INFINEON |
25+23+ |
TO-263 |
19073 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
47186 |
郑重承诺只做原装进口现货 |
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SGB07N120规格书下载地址
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2020-11-6
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