REGULATING PULSE WIDTH MODULATOR

Description The SG1525A/1527A series of pulse width modulator integrated circuits are designed to offer improved performance and lower external parts count when used to implement all types of switching power supplies. The on-chip +5.1 V reference is trimmed to ±1 initial accuracy and the input co

High-Reliability Power Management

The SG1525A/1527A series of pulse width modulator integrated circuits are designed to offer improved performance and lower external parts count when used to implement all types of switching power supplies. The on-chip +5.1 volt reference is trimmed to ±1% initial accuracy and the input common-mo ·8V to 35V operation\n·5.1V reference trimmed to ±1%\n·100Hz to 500KHz oscillator range\n·Separate oscillator sync terminal\n·Adjustable dead-time control\n·Internal soft-start\n·Input under-voltage lockout\n·Latching P.W.M. to prevent multiple pulses\n·Dual source/sink output drivers;

REGULATING PULSE WIDTH MODULATOR

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Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i