Dual 10 m high-side switch

Dual 10 mOhm High Side Switch The 10XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and diagnostic functions. It has been designed for industrial applications. The low RDS(ON) channels (

Dual 6.0 m high-side switch

Overview The MC06XSD200 device is part of a 36 V high-side switch product family with integrated control and a high number of protective and diagnostic functions. It is designed for industrial applications. The low RDS(on) channels ( Features Two fully protected 6.0 mΩ (@ 25 °C) high-side s

Dual 24 V, 6.0 mOhm High Side Switch

Overview The MC06XS4200 device is part of a 24 V high side switch product family with integrated control, and a high number of protective and diagnostic functions. It is designed for truck, bus, and industrial applications. The low RDS(ON) channels ( Features • Two fully-protected 6.0 mΩ (@ 25

Quad High Side Switch?봁ual 10 m, Dual 25 m

The 10XSC425 is one in a family of devices designed for low-voltage lighting or factory automation applications. Its four low RDS(ON) MOSFETs (dual 10 mΩ/dual 25 mΩ) can control four separate 55 W / 28 W bulbs, and/or Xenon modules, and/or LEDs, and/or DC low voltage motors. Features • Four prot

Dual High-Side Switch

The 07XSC200 is one in a family of devices designed for low-voltage lighting or factory automation applications. Its two low RDS(ON) MOSFETs (dual 7.0 m) can control two separate 55 W / 28 W bulbs, and/or Xenon modules, and/or LEDs, and/or DC low voltage motors. Features • Dual 7.0 mΩ max high

Dual 16 mOhm High-Side Switch

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Triple 7.0 mOhm and Dual 17 mOhm High-Side Switch

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Penta 17 m High-Side Switch

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Dual 6.0 m high-side switch

包装：散装 描述：.100\ RF/IF，射频/中频和 RFID RFI 和 EMI - 触头，簧片和衬垫

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp