Ball guide prevents over compression of elastomer

文件：88.81 Kbytes Page：4 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 20A, RDS(ON) = 25mW @VGS = 10V. RDS(ON) = 32mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 7.3A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

Precision Potentiometer / Position Sensor

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1.0A Dual USB High-Side Power Switch

文件：222.44 Kbytes Page：9 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.53941 Mbytes Page：5 Pages