GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package

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GaAs Infrared Emitter in SMT Package

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GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package

Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)

Features • Very highly efficient GaAs-LED • DC (with modulation) or pulsed operations are possible • High reliability • High pulse handling capability • Very short switching times (10 ns) • Suitable for surface mounting (SMT) • Available on tape and reel • SFH 4200 same package as SFH 320

Leistungsstarke IR-Lumineszenzdiode

Features • High Power GaAs-LED (35mW) • High Efficiency at low currents • Homogeneous Radiation Pattern • Typical peak wavelength 950nm • Suitable for IR reflow and TTW soldering • Moisture Sensitivity Level 2 according to JEDEC Standard J-STD-020A Applications • High data transmission rat

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • High Power GaAs-LED (35 mW) • High Efficiency at low currents • High Forward current possible at high temperatures • Homogeneous Radiation Pattern • Typical peak wavelength 950nm Applications • High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) • An

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter

Features • High Power GaAs-LED (35mW) • High Efficiency at low currents • Homogeneous Radiation Pattern • Typical peak wavelength 950nm • Suitable for IR reflow soldering • Moisture Sensitivity Level 2 according to JEDEC Standard J-STD-020A Applications • Miniature photointerrupters •

Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)

Features • Very highly efficient GaAs-LED • DC (with modulation) or pulsed operations are possible • High reliability • High pulse handling capability • Very short switching times (10 ns) • Suitable for surface mounting (SMT) • Available on tape and reel • SFH 4200 same package as SFH 320

Leistungsstarke IR-Lumineszenzdiode

Features • High Power GaAs-LED (35mW) • High Efficiency at low currents • Homogeneous Radiation Pattern • Typical peak wavelength 950nm • Suitable for IR reflow and TTW soldering • Moisture Sensitivity Level 2 according to JEDEC Standard J-STD-020A Applications • High data transmission rat

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter

Features • High Power GaAs-LED (40mW) • High Efficiency at low currents • Typical peak wavelength 950nm Applications • High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) • Analog and digital Hi-Fi audio and video signal transmission • Low power consumption (

GaAs Infrared Emitter in SMT Package

文件：138.29 Kbytes Page：7 Pages

Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)

High Power Infrared Emitter

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

420 LED wire-to-board connector

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Supporting the Intel Celeron processor

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Celeron M Processor on 65 nm Process

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