NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

Silicon NPN Phototransistor in SMT SIDELED짰-Package Version 1.3

Features: • Spectral range of sensitivity: (typ) 750 1120 nm • Package: SIDELED • Special: High linearity • P-LCC-2 package • Available in groups • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Se

OSRAM SIDELED®, SFH 325 FA

采用 SMT SIDELED® 封装的硅 NPN 光电三极管

NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

Features ● Especially suitable for applications from 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) ● High linearity ● P-LCC-2 package ● Available in groups ● Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. Applications ● Miniature photointe

Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR325CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

Dual Voltage Regulator

文件：222.23 Kbytes Page：8 Pages

Dual Voltage Regulator

文件：222.23 Kbytes Page：8 Pages

BROADBAND RF POWER TRANSISTOR NPN SILICON

文件：95.63 Kbytes Page：6 Pages