NPN-Silizium-Fototransistor im SMT-Gehase

Features • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) • Available only on tape and reel Applications • Ambie

OSRAM Reflective Interrupter, SFH 3201

NPN-Silizium-Fototransistor im SMT-Gehase

Features • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) • Available only on tape and reel Applications • Ambie

NPN-Silizium-Fototransistor im SMT-Gehase

Features • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) • Available only on tape and reel Applications • Ambie

DC/DC Converter Applications

Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers,

RX Gain Control Amplifier

Description CXA3201N is an RX gain control amplifier suitable for CDMA cellular/PCS phone. Features • Wide gain control range • Linear gain slope • Wideband operation (50MHz to 300MHz) • Very small package (16 Pin SSOP) • Low voltage operation • Two input ports • Power save function inclu

PowerMOS transistor TOPFET high side switch

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. FEATURES ● Vertical power TrenchMOS ● Low on-state resistance ● CMOS logic compatible ● Very low quiescent current ● Overtemperature protection ● Load current

Switching Type Regulator

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UHF/VHF remote control receiver

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