Isolation 10.0 AMPS. Glass Passivated Super Fast Rectifiers

文件：87.16 Kbytes Page：2 Pages

Isolated 10.0 AMPS. Glass Passivated Super Fast Rectifiers

文件：273.67 Kbytes Page：2 Pages

Isolated 10.0 AMPS. Glass Passivated Super Fast Rectifiers

文件：633.61 Kbytes Page：2 Pages

10.0AMPS. Isolated Glass Passivated Super Fast Rectifiers

文件：423.11 Kbytes Page：3 Pages

35ns, 10A, 100V, Super Fast Recovery Rectifier

封装/外壳：TO-220-2 整包 包装：管件 描述：DIODE GEN PURP 100V 10A ITO220AC 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 整包 包装：管件 描述：DIODE GEN PURP 100V 10A ITO220AC 分立半导体产品 二极管 - 整流器 - 单

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp