8.0 AMPS. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

8.0AMP. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

8.0AMPS. Glass Passivated Super Fast Rectifiers

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8.0 AMPS. Glass Passivated Super Fast Rectifiers

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35ns, 8A, 200V, Super Fast Recovery Rectifier

封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 200V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 200V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 单

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

Silicon MOS IC

■ Features ● Allowing downsizing of the sets through the reduction of a parts count resulting from the voltage step-up utilizing a coil instead of a transformer and employing the thin surface mounting package. ● Allowing low voltage drive (adaptable to a small and low-voltage battery), or VC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)