SUPERFAST RECOVERY RECTIFIER

FEATURES • Low forward voltage drop • High Current Capability • High reliability • High surge Current Capability • Good for switching mode application • High temperature soldering 260°C/10seconds at terminals • Pb free product are available 99 Sn above can meet RoHS • environment substance

SUPER FAST RECTIFIERS

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Super Fast Recovery Rectifier

VOLTAGE RANGE 50 to 600 Volts 10.0 Amperes

FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Good for switching mode application • High temperature soldering : 260°C / 10 seconds at terminals • Pb free product at available : 99 Sn above meet RoHS environment substance

SUPERFAST RECOVERY RECTIFIER

FEATURES • Low forward voltage drop • High Current Capability • High reliability • High surge Current Capability • Good for switching mode application • High temperature soldering 260°C/10seconds at terminals • Pb free product are available 99 Sn above can meet RoHS environment substance di

Super Fast Recovery Rectifier

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp