GaAs Infrared Emitting Diode

DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. FEATURES • Side-emitting plastic package • 50¡ (nominal) beam angle • 935 nm wavel

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Infrared Sensors Line Guide

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GaAs Infrared Emitting Diode

SEP Series GaAs Infrared Emitting Diode, Side-emitting

Description The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. Features ● Side-emitting plastic package ● 50 ° (nominal) beam angle ● 935 nm wave

Side-emitting plastic package

Description The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. Features ● Side-emitting plastic package ● 50 ° (nominal) beam angle ● 935 nm wave

封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 935NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 935NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Hollow space floor box system: 8506E

Features: Delivery cond.: Complete and pre-assembled

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