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SE701晶体管资料

  • SE7010别名:SE7010三极管、SE7010晶体管、SE7010晶体三极管

  • SE7010生产厂家:美国范恰得公司

  • SE7010制作材料:Si-NPN

  • SE7010性质:视频输出 (Vid)

  • SE7010封装形式:直插封装

  • SE7010极限工作电压:150V

  • SE7010最大电流允许值:0.5A

  • SE7010最大工作频率:<1MHZ或未知

  • SE7010引脚数:3

  • SE7010最大耗散功率:0.8W

  • SE7010放大倍数

  • SE7010图片代号:C-40

  • SE7010vtest:150

  • SE7010htest:999900

  • SE7010atest:0.5

  • SE7010wtest:0.8

  • SE7010代换 SE7010用什么型号代替:BF258,BF337,BF658,3DG180D,

型号 功能描述 生产厂家 企业 LOGO 操作
SE701

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

POLYFET

SE701

VDMOS SHORTFORM S1

POLYFET

RF POWER VDMOS TRANSISTOR

文件:61.52 Kbytes Page:2 Pages

POLYFET

70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件:264.28 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

文件:260.079 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件:264.28 Kbytes Page:9 Pages

NJRC

日本无线

SE701产品属性

  • 类型

    描述

  • 型号

    SE701

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

更新时间:2026-8-1 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
polyfet
23+
高频管
50000
全新原装正品现货,支持订货
POLYFET
23+
AE
3128
原装正品代理渠道价格优势
POLYFET
18+
AE
3128
原装进口假一罚十
polyfet
2023+
高频管
8800
正品渠道现货 终端可提供BOM表配单。

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