SDT5513晶体管资料
SDT5513别名:SDT5513三极管、SDT5513晶体管、SDT5513晶体三极管
SDT5513生产厂家:
SDT5513制作材料:Si-NPN
SDT5513性质:低频或音频放大 (LF)_开关管 (SW)
SDT5513封装形式:直插封装
SDT5513极限工作电压:100V
SDT5513最大电流允许值:2A
SDT5513最大工作频率:<1MHZ或未知
SDT5513引脚数:3
SDT5513最大耗散功率:7W
SDT5513放大倍数:
SDT5513图片代号:D-12
SDT5513vtest:100
SDT5513htest:999900
- SDT5513atest:2
SDT5513wtest:7
SDT5513代换 SDT5513用什么型号代替:3DK104D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDT5513 | Trans GP BJT NPN 80V 0.5A 3-Pin TO-5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
CMOS-CCD 1H Delay Line for NTSC Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t | SONYSony Corporation 索尼 | |||
CMOS-CCD 1H Delay Line for NTSC Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t | SONYSony Corporation 索尼 | |||
TR909 DLC/FLC SLIC with Low Power Standby The HC5513 is a subscriber line interface circuit which is interchangeable with Ericsson’s PBL3764 for distributed central office applications. Enhancements include immunity to circuit latch-up during hot plug and absence of false signaling in the presence of longitudinal currents. Features • | INTERSIL | |||
Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward c | NTE | |||
SURFACE MOUNT SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free | EIC |
SDT5513产品属性
- 类型
描述
- Maximum Collector Emitter Saturation Voltage:
0.35V
- Maximum Collector Emitter Voltage:
80V
- Maximum DC Collector Current:
0.5A
- Maximum Power Dissipation:
7000mW
- Type:
NPN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SDT |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
Diodes |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
S |
18+ |
原厂原装假一赔十 |
112 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
DIODES/美台 |
23+ |
NA |
6000 |
原装正品假一罚百!可开增票! |
|||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
|||
S |
88+ |
原厂封装 |
112 |
宇航IC只做原装假一罚十 |
|||
DIODES(美台) |
25+ |
PowerDI5 |
6843 |
样件支持,可原厂排单订货! |
SDT5513规格书下载地址
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DdatasheetPDF页码索引
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