Switching Diode

Features • SMD package : SOT-23 • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

Small Signal Fast Switching Diode

General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage

Switching Diodes

Switching Diode

• SMD package : SOT-523\n• Low forward voltage : VF=0.9V(Typ.)\n• Fast reverse recovery time : trr=1.6ns(Typ.)\n• Small total capacitance : CT=2.2pF(Typ.);

Small Signal Fast Switching Diode

General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-523 surface mounted device (SMD) packages. Features and Benefits ● Silicon epitaxial planar diode ● High switching speed: trr≤4ns ● Low forward drop voltage and low leakage cu

Switching Diode

Features • SMD package : SOT-523 • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6ns(Typ.) • Small total capacitance : CT=2.2pF(Typ.)

Switching Diode

Features • SMD package : SOT-523F • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

Small Signal Fast Switching Diode

General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-523F surface mounted device (SMD) packages. Features and Benefits ● Silicon epitaxial planar diode ● High switching speed: trr≤4ns ● Low forward drop voltage and low leakage c

Small Signal Fast Switching Diode

General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage cu

Switching Diode

Features • SMD package : SOT-23F • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

Switching Diode

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Switching Diode

文件：253.12 Kbytes Page：4 Pages

Switching Diode

文件：272.93 Kbytes Page：4 Pages

Switching Diodes

Switching Diode

文件：272.93 Kbytes Page：4 Pages

Switching Diode

文件：273.01 Kbytes Page：4 Pages

Switching Diode

文件：273.01 Kbytes Page：4 Pages

SWITCHING DIODE

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Integrated Circuit 5W Audio Amplifier with Muting

Description: The NTE7000 is a monolithic integrated circuit in a 16–Lead DIP type package intended for use as a low frequency power amplifier in a wide range of applications in radio and TV sets. Features: ● Muting Facility ● Protection Against Chip Over Temperature ● Very Low Noise ● High S

64-Bit MIPS RISC Microprocessor with Integrated L2 Cache

FEATURES • Dual-Issue symmetric superscalar microprocessor • 500MHz max CPU frequency • Capable of issuing two instructions per clock cycle • Integrated primary and secondary caches • 16KB Instruction, 16KB Data, and 256KB on-chip secondary • All are 4-way set associative with 32

Silicon planar type

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Silicon planar type

文件：58.34 Kbytes Page：4 Pages

Trigger amplifier with two wire current interface

文件：57.99 Kbytes Page：8 Pages