100 A, 700 V Ultrafast Recovery Rectifier

• Fast Recovery: 60nsec Maximum\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• Single Chip Construction\n• PIV to 1100 Volts\n• Hermetically Sealed\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available;

100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER

文件：39.89 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f