100 A, 300 V Ultrafast Recovery Rectifier

• Fast Recovery: 60nsec Maximum\n• Low Reverse Leakage Current\n• PIV to 1100 Volts\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available;

100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER

文件：39.89 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)