HYPER FAST CENTERTAP RECTIFIER

FEATURES: ● Hyper Fast Recovery: 35 ns Maximum ● High Surge Rating ● Low Reverse Leakage Current ● Low Junction Capacitance ● Hermetically Sealed Package, isolated (TO-254, Z) or hot case (SMD1) ● Gold Eutectic Die Attach Available ● Ultrasonic Aluminum Wire Bonds ● TX, TXV, or Space Level

15 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

Isolation voltage 3750Vrms 1ch Gate Driver Providing Galvanic Isolation

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15 W, 6.0 GHz, GaN HEMT Die

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CERAMIC DIELECTRIC TRIMMER CAPACITORS

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