| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDR1512 | 15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER 文件:47.26 Kbytes Page:2 Pages | SSDI | ||
15 A, 1.2 kV Ultrafast Recovery Rectifier • Ultrafast Recovery: 75 nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Custom Lead Forming Available\n• Eutectic Die Attach\n• TX, TXV, or S Level Screening Available; | SSDI | |||
15 A, 1.2 kV Ultrafast Recovery Rectifier • Ultrafast Recovery: 75 nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Custom Lead Forming Available\n• Eutectic Die Attach\n• TX, TXV, or S Level Screening Available; | SSDI | |||
15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER 文件:47.26 Kbytes Page:2 Pages | SSDI | |||
15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER 文件:47.26 Kbytes Page:2 Pages | SSDI | |||
15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER 文件:47.26 Kbytes Page:2 Pages | SSDI | |||
15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER 文件:47.26 Kbytes Page:2 Pages | SSDI | |||
Dual 1 Form A/B, C Solid State Relay Dual 1 Form A/B, C Solid State Relay DESCRIPTION The LH1512 relays contain normally open and normally closed switches that can be used independently as a 1 form A and 1 form B relay, or when used together, as a 1 form C relay. The relays are constructed as a mult.-chip hybrid device. Act | VISHAYVishay Siliconix 威世威世科技公司 | |||
NorthenLite??G.lite BiCMOS Analog Front-End Circuit GENERAL DESCRIPTION The STLC1512 G.lite line driver chip contains the line driver as well as part of the receive path required in a central office G.lite modem. It provides an interface between the AFE chip (STLC1511) and the telephone line. The line driver chip has been designed with low power c | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode | STMICROELECTRONICS 意法半导体 |
SDR1512产品属性
- 类型
描述
- Io [A]:
15.00
- trr [nsec]:
75
- Ifsm [A]:
150
- Vf typ [V]:
1.50
- Vf max [V]:
1.65
- Ir typ [µA]:
2.00
- Ir max [µA]:
20.00
- BVr min [V]:
N/A
- Package:
TO-257
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