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SDR1512

15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER

文件:47.26 Kbytes Page:2 Pages

SSDI

15 A, 1.2 kV Ultrafast Recovery Rectifier

• Ultrafast Recovery: 75 nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Custom Lead Forming Available\n• Eutectic Die Attach\n• TX, TXV, or S Level Screening Available;

SSDI

15 A, 1.2 kV Ultrafast Recovery Rectifier

• Ultrafast Recovery: 75 nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Custom Lead Forming Available\n• Eutectic Die Attach\n• TX, TXV, or S Level Screening Available;

SSDI

15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER

文件:47.26 Kbytes Page:2 Pages

SSDI

15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER

文件:47.26 Kbytes Page:2 Pages

SSDI

15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER

文件:47.26 Kbytes Page:2 Pages

SSDI

15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER

文件:47.26 Kbytes Page:2 Pages

SSDI

Dual 1 Form A/B, C Solid State Relay

Dual 1 Form A/B, C Solid State Relay DESCRIPTION The LH1512 relays contain normally open and normally closed switches that can be used independently as a 1 form A and 1 form B relay, or when used together, as a 1 form C relay. The relays are constructed as a mult.-chip hybrid device. Act

VISHAYVishay Siliconix

威世威世科技公司

NorthenLite??G.lite BiCMOS Analog Front-End Circuit

GENERAL DESCRIPTION The STLC1512 G.lite line driver chip contains the line driver as well as part of the receive path required in a central office G.lite modem. It provides an interface between the AFE chip (STLC1511) and the telephone line. The line driver chip has been designed with low power c

STMICROELECTRONICS

意法半导体

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

STMICROELECTRONICS

意法半导体

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

STMICROELECTRONICS

意法半导体

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

STMICROELECTRONICS

意法半导体

SDR1512产品属性

  • 类型

    描述

  • Io [A]:

    15.00

  • trr [nsec]:

    75

  • Ifsm [A]:

    150

  • Vf typ [V]:

    1.50

  • Vf max [V]:

    1.65

  • Ir typ [µA]:

    2.00

  • Ir max [µA]:

    20.00

  • BVr min [V]:

    N/A

  • Package:

    TO-257

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