| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDB130 | Schottky Barrier Diode Features • Very low forward voltage: VF=0.37Max. • Low switching loss • High reliability Applications • Portable equipment battery applications • SMPS applications | AUK |   | |
SDB130 | 30V, 1A SCHOTTKY BARRIER RECTIFIER Description The SDB130 is suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications. Features • Low forward voltage drop • Low power loss an | KODENSHI 可天士 | | |
SDB130 | SDB130-1 文件：228.57 Kbytes Page：5 Pages | KODENSHI 可天士 | | |
SDB130 | Schottky Barrier Diodes | AUK | | |
Schottky Barrier Diode Features • Low switching loss • High reliability • Very low reverse current: IR=0.15mA Max. @ VR=30V • Low forward voltage: VF=0.49V Max. @ IF=1A Applications • Portable equipment battery applications • SMPS applications | AUK | | ||
30V, 1A SCHOTTKY BARRIER RECTIFIER Description The SDB130B is suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications. Features • Low forward voltage drop • Low power loss a | KODENSHI 可天士 | | ||
silicon bilateral voltage triggered switch 文件：127.65 Kbytes Page：6 Pages | SUNTAC | | ||
silicon bilateral voltage triggered switch | SUNTAC | | ||
silicon bilateral voltage triggered switch 文件：127.65 Kbytes Page：6 Pages | SUNTAC | | ||
silicon bilateral voltage triggered switch 文件：127.65 Kbytes Page：6 Pages | SUNTAC | | ||
SDB130-1 文件：228.57 Kbytes Page：5 Pages | KODENSHI 可天士 | | ||
30V, 1A SCHOTTKY BARRIER RECTIFIER 文件：233.65 Kbytes Page：5 Pages | KODENSHI 可天士 | | ||
Schottky Barrier Diodes | AUK | | ||
30V, 1A SCHOTTKY BARRIER RECTIFIER 文件：233.65 Kbytes Page：5 Pages | KODENSHI 可天士 | | ||
HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 1200/1600V • VDRM Repetitive peak off-state voltage 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 130A • IF (AV) Average forward current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • MIX DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E802 | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP | MITSUBISHI 三菱电机 | |
SDB130产品属性
- 类型
描述
- VRM [V]：
30
- IO [A]：
1
- IFSM [A]：
8
- VF [V]_Max.：
0.37
- VF [V]_IF [A]：
1
- IR [mA]_Max.：
2
- IR [mA]_VR [V]：
30
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KODENSHI |
25+ |
SOD123 |
880000 |
明嘉莱只做原装正品现货 |
|||
AUK |
22+ |
SOD123 |
20000 |
只做原装 品质保障 |
|||
AUK |
25+ |
SOD123 |
20000 |
原装 |
|||
AUK |
23+ |
SOD123 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
AUK |
9 |
SOD123 |
2190 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AUK |
22+ |
SOD-123 |
6000 |
十年配单,只做原装 |
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2013-3-7
DdatasheetPDF页码索引
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