Nonvolatile Memory 1-Kbit E2PROM

Features ● Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM) ● 128 × 8-bit organization ● Supply voltage 5 V ● Serial 2-line bus for data input and output (I2C Bus) ● Reprogramming mode, 10 ms erase/write cycle ● Reprogramming by mean

Nonvolatile Memory 1-Kbit E2PROM

Nonvolatile Memory 1-Kbit E2PROM

Features ● Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology (E2PROM) ● 128 × 8-bit organization ● Supply voltage 5 V ● Serial 2-line bus for data input and output (I2C Bus) ● Reprogramming mode, 10 ms erase/write cycle ● Reprogramming by mean

Electronic View-Finder Driving IC with Character Input

■ Features • Built-in video amplifier, synchronous signal separa tion, horizontal vertical oscillator, AFC, γ correction, character mixing, and vertical driver circuits. • Direct drive of a vertical deflection coil available • Built-in capacitor for vertical synchronous signal separation

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability