DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

封装/外壳：DO-205AC，DO-30，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 1.6KV 110A DO205 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-205AC，DO-30，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 2KV 110A DO205 分立半导体产品 二极管 - 整流器 - 单

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

D챕tails complets sur le site du fabricant:

IDEAL # 103 (103) Description du produit Détails complets sur le site du fabricant: IDEAL INDUSTRIES, INC

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Smooth, high torque, roller ratchet handle

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