1200V /40 mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching High robustness of dv/dt Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

Extremely enhanced avalanche capability

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High system

1200V NPT IGBT

Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

IGBT

文件：162.44 Kbytes Page：8 Pages

IGBT

文件：162.44 Kbytes Page：8 Pages